IRF130 View Datasheet(PDF) -

Data Sheet

IRF130

March 1999 File Number 1566.4

14A, 100V, 0.160 Ohm, N-Channel

Power MOSFET

This N-Channel enhancement mode silicon gate power field

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a specified level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17411.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF130

TO-204AA

IRF130

NOTE: When ordering, use the entire part number.

Features

• 14A, 100V

• rDS(ON) = 0.160Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

G

S

Packaging

DRAIN

(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

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