BUZ31 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

BUZ31

SIPMOS Power Transistor

New Jersey Semiconductor 

BUZ 31

Electrical Characteristics, at 71 = 25°C, unless otherwise specified

Parameter

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, /D = 0.25 mA, 7] = 25 °C

Gate threshold voltage

\/GS=Vbs, /D = 1 rnA

Zero gate voltage drain current

VDS = 200 V, VGS = 0 V, 7] = 25 °C

VDS = 200 V, VGS = 0 V, 7] = 125 °C

Gate-source leakage current

VGS = 20 v, Vbs = o V

Drain-Source on-resistance

1/GS = 10V, /D = 9A

Symbol

min.

^(BR)DSS

200

^GS(th)

2.1

/DSS

-

-

/GSS

-

^DS(on)

-

Values

Unit

typ.

max.

V

-

-

3

4

MA

0.1

1

10

100

nA

10

100

Q

0.16

0.2

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