CS4N60F A9TDY
○R
Electrical Characteristics(Tc= 25℃ unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25℃
VDS =600V, VGS= 0V,
Ta = 25℃
VDS =480V, VGS= 0V,
Ta = 125℃
VGS =+20V
VGS =-20V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp≤300µs,δ≤2%
Test Conditions
VGS=10V,ID=2A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs
Forward Trans conductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Test Conditions
VDS=15V, ID =2A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =4A VDD = 300V
RG =10Ω
ID =4A VDD =480V
VGS = 10V
Rating
Unit
Min. Typ. Max. s
600 -- --
V
-- 0.6 -- V/℃
-- --
1
µA
-- -- 100 µA
-- -- 10 µA
-- -- -10 µA
Rating
Min. Typ. Max.
-- 2.0 2.5
2.0
4.0
Units
Ω
V
Rating
Min. Typ. Max.
3.5 --
-- 554
-- 50
-- 2.2
Units
S
pF
Rating
Min. Typ. Max.
-- 14 --
-- 13 --
-- 32 --
-- 8 --
-- 13
-- 2.7
-- 5.5
Units
ns
nC
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 2 of 10 2015V01