CS4N60F A9R
○R
1.15
1.1
1.05
1
0.95
0.9 VGS=0V
0.85
ID=250μA
0.8
0.75
0.7
0.65
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction temperature , C
Figure 10 Typical Theshold Voltage vs Junction Temperature
1.15
1.05
0.95
VGS=0V
ID=250μA
0.85
0.75
-55 -30
-5 20 45 70 95 120 145 170
Tj, Junction temperature , C
Figure 11 Typical Breakdown Voltage vs Junction Temperature
10000
1000
Ciss
100
Coss
10 VGS=0V , f=1MHz
Ciss=Cgs+Cgd
Coss=Cds+Cgd
Crss=Cgd
1
0.1
1
10
Vds , Drain - Source Voltage , Volts
Crss
100
Figure 12 Typical Capacitance vs Drain to Source Voltage
12
10
VDS=480V
VDS=300V
VDS=120V
8
6
4
2
ID=4A
0
0
3
6
9
12
15
Qg , Total Gate Charge , nC
Figure 13 Typical Gate Charge vs Gate to Source Voltage
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O. , LTD. Pag e 6 of 1 0
2015V01