AS5040
Data Sheet
CMOS / Program Input: Prog
(operating conditions: Tamb = -40 to +125°C, VDD5V = 3.0-3.6V (3V operation) VDD5V = 4.5-5.5V (5V operation)
unless otherwise noted)
Parameter
Symbol
Min
Max
Unit
Note
High level input voltage
High level input voltage
Low level input voltage
Pull-down high level input current
VIH
VPROG
VIL
IiL
0.7 * VDD5V
5
See “programming conditionsâ€
0.3 * VDD5V
100
V
V During programming
V
µA VDD5V: 5.5V
CMOS Output Open Drain: MagINCn, MagDECn
(operating conditions: Tamb = -40 to +125°C, VDD5V = 3.0-3.6V (3V operation) VDD5V = 4.5-5.5V (5V operation)
unless otherwise noted)
Parameter
Symbol
Min
Max
Unit
Note
Low level output voltage
VOL
Output current
IO
Open drain leakage current
IOZ
VSS+0.4
4
2
1
V
mA
VDD5V: 4.5V
VDD5V: 3V
µA
CMOS Output: A, B, Index, PWM
(operating conditions: Tamb = -40 to +125°C, VDD5V = 3.0-3.6V (3V operation) VDD5V = 4.5-5.5V (5V operation)
unless otherwise noted)
Parameter
Symbol
Min
Max
Unit
Note
High level output voltage
Low level output voltage
Output current
VOH
VDD5V-0.5
VOL
VSS+0.4
IO
4
2
V
V
mA
VDD5V: 4.5V
VDD5V: 3V
Tristate CMOS Output: DO
(operating conditions: Tamb = -40 to +125°C, VDD5V = 3.0-3.6V (3V operation) VDD5V = 4.5-5.5V (5V operation)
unless otherwise noted)
Parameter
Symbol
Min
Max
Unit
Note
High level output voltage
Low level output voltage
Output current
Tri-state leakage current
VOH
VDD5V –0.5
VOL
VSS+0.4
IO
4
2
IOZ
1
V
V
mA
VDD5V: 4.5V
VDD5V: 3V
µA
Magnetic Input Specification
(operating conditions: Tamb = -40 to +125°C, VDD5V = 3.0-3.6V (3V operation) VDD5V = 4.5-5.5V (5V operation) unless otherwise
noted)
Two-pole cylindrical diametrically magnetised source:
Parameter
Symbol Min Typ Max Unit
Note
Diameter
Thickness
Magnetic input field
amplitude
dmag
4
6
tmag
2.5
mm Recommended magnet: Ø 6mm x 2.5mm for
mm cylindrical magnets
Bpk
45
Required vertical component of the
75
mT
magnetic field strength on the die’s surface,
measured along a concentric circle with a
radius of 1.1mm
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