SGH10N60RUFD View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
SGH10N60RUFD Datasheet PDF : 8 Pages
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1000
Common Emitter
V =±
GE
15V,
R
G
=
20Ω
TC = 25℃ ━━
TC = 125℃ ------
Eoff
100
Eon
5
10
15
20
Collector Current, I [A]
C
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
RL = 30 Ω
TC = 25℃
12
V = 100 V
CC
9
300 V
200 V
6
3
0
0
10
20
30
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
100
I MAX. (Pulsed)
C
IC MAX. (Continuous)
10
DC Operation
50us
100us
1㎳
1
Single Nonrepetitive
Pulse T = 25℃
C
Curves must be derated
linearly with increase
in temperature
0.1
0.1
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
50
10
1
1
Safe Operating Area
V = 20V, T = 100℃
GE
C
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 16. Turn-Off SOA Characteristics
10
1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
single pulse
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100
101
©2002 Fairchild Semiconductor Corporation
Fig 17. Transient Thermal Impedance of IGBT
SGH10N60RUFD Rev. A1
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