BDW46G View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
BDW46G Datasheet PDF : 7 Pages
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BDW42G (NPN), BDW46G, BDW47G (PNP)
ACTIVE−REGION SAFE OPERATING AREA
50
20
10 TJ = 25°C
5.0
0.1 ms
1.0 ms
0.5 ms
2.0
SECOND BREAKDOWN LIMIT dc
BONDING WIRE LIMIT
1.0
THERMAL LIMITED
0.5
@ TC = 25°C (SINGLE PULSE)
50
20
10 TJ = 25°C
5.0
0.1 ms
1.0 ms
0.5 ms
SECOND BREAKDOWN LIMIT
2.0
BONDING WIRE LIMIT
dc
1.0
THERMAL LIMITED
0.5
@ TC = 25°C (SINGLE PULSE)
0.2
0.1
0.05
1.0
BDW42
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. BDW42
0.2
0.1
0.05
1.0
BDW46
BDW47
2.0 3.0 5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. BDW46 and BDW47
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE limits
of the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 5 and 6 is based on
TJ(pk) = 200°C; TC is variable depending on conditions.
Second breakdown pulse limits are valid for duty cycles to
10% provided TJ(pk) ≤ 200°C. TJ(pk) may be calculated from
the data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
*Linear extrapolation
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
TJ = 25°C
VCE = 3.0 V
IC = 3.0 A
BDW46, 47 (PNP)
BDW42 (NPN)
2.0 5.0 10 20 50 100 200 500 1000
f, FREQUENCY (kHz)
Figure 7. Small−Signal Current Gain
300
200
100
70
50
30
0.1 0.2
TJ = + 25°C
Cob
Cib
BDW46, 47 (PNP)
BDW42 (NPN)
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
50 100
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