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Part Name
Description
BDX33 View Datasheet(PDF) - Comset Semiconductors
Part Name
Description
Manufacturer
BDX33
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Comset Semiconductors
BDX33 Datasheet PDF : 4 Pages
1
2
3
4
NPN BDX33 – BDX33A – BDX33B – BDX33C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
V
CBO
=45 V
T
C
=100°C
BDX33
-
-
V
CBO
=60 V
I
CBO
Collector-Base Cutoff
Current
T
C
=100°C
V
CBO
=80 V
T
C
=100°C
BDX33A -
-
5 mA
BDX33B -
-
V
CBO
=100 V
T
C
=100°C
BDX33C -
-
BDX33
V
CE(SAT)
Collector-Emitter
saturation Voltage (*)
I
C
=4.0 A, I
B
=8.0 mA
BDX33A
BDX33B
-
BDX33C
BDX33
- 2.5
V
I
C
=3.0 A, I
B
=6.0 mA
BDX33A
BDX33B
-
- 2.5
BDX33C
BDX33
V
F
Forward Voltage (pulse
method)
I
F
=8 A
BDX33A
BDX33B
-
- 4.0 V
BDX33C
V
BE
Base-Emitter Voltage (*)
I
C
=4.0 A, V
CE
=3.0V
BDX33
BDX33A
-
I
C
=3.0 A, V
CE
=3.0V
BDX33B
BDX33C
-
- 2.5
V
- 2.5
h
FE
DC Current Gain (*)
V
CE
=3.0 V, I
C
=4.0 A
BDX33
BDX33A
750
-
V
CE
=3.0 V, I
C
=3.0 A
BDX33B
BDX33C
750
-
-
-
-
(*) Pulse Width
≈
300
µ
s, Duty Cycle
∠
2.0%
23/10/2012
COMSET SEMICONDUCTORS
3/4
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