BUH51 View Datasheet(PDF) - ON Semiconductor
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BUH51 Datasheet PDF : 10 Pages
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BUH51
TYPICAL THERMAL RESPONSE
1
SECOND BREAKDOWN
0.8
DERATING
0.6
THERMAL DERATING
0.4
0.2
0
20 40
60
80
100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 21. Forward Bias Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC −VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 22 is
based on TC = 25°C; TJ(pk) is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC > 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 22 may be found at any case temperature by using the
appropriate curve on Figure 21.
TJ(pk) may be calculated from the data in Figure 24. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn−off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 23). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
100
10
1 ms
1
5 ms
DC
0.1
1 µs
10 µs
EXTENDED
SOA
0.01
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 22. Forward Bias Safe Operating Area
4
GAIN ≥ 4
TC ≤ 125°C
LC = 500 µH
3
2
1
−5 V
0
200 300 400
0V
−1.5 V
500 600 700 800 900
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 23. Reverse Bias Safe Operating Area
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