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TEA1202TS_00 View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
TEA1202TS_00
Philips
Philips Electronics Philips
TEA1202TS_00 Datasheet PDF : 24 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
Battery power unit
Objective specification
TEA1202TS
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
DC/DC converter
UPCONVERSION
VI(up)
VO(up)
input voltage
output voltage
VI(start)
start-up input voltage
DOWNCONVERSION
IL < 10 mA
VI(dwn)
input voltage
VO(dwn) output voltage
CURRENT LEVELS
Iq
Ishdwn
ILX(max)
Ilim
quiescent current
current in shut-down mode
maximum continuous current at
pins LX1 and LX2
current limit deviation
Tamb = 80 °C
Ilim set to 1.0 A
upconversion
downconversion
POWER MOSFETS
RDSon(N)
RDSon(P)
drain-to-source on-state
resistance NFET
drain-to-source on-state
resistance PFET
Tj = 27 °C
Tj = 27 °C
EFFICIENCY
η
efficiency upconversion
TIMING
VI = 1.2 V; VO up to 3.3 V
IL = 1 mA
IL = 10 mA
IL = 100 mA
fsw
fi(sync)
switching frequency
synchronization clock input
frequency
PWM mode
tstart
start-up time
Low dropout voltage regulators
VLDO
Vdropout
ILDO(max)
RDSon
output voltage range
dropout voltage
maximum output current
drain-to-source on-state
resistance
VLDO < V4 + 0.4 V
ILDO = 50 mA
in regulation
VFB1,2 > 2 V; Tj = 27 °C
General characteristics
Vref
reference voltage
2000 Jun 08
3
MIN. TYP. MAX. UNIT
VI(start)
5.50 V
VO(uvlo)
5.50 V
0.93 0.96 1.00 V
VO(uvlo)
1.30
5.50 V
5.50 V
110
µA
0
2
10
µA
1.0
A
12
12
+12
%
+12
%
110
m
125
m
66
%
81
%
85
%
480
600
720
kHz
6
13
20
MHz
10
ms
1.30
50
200
5.50 V
75
mV
mA
m
1.165 1.190 1.215 V
 

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