Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Part Name
Description
TEA1202TS_00 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
TEA1202TS_00
Battery power unit
Philips Electronics
TEA1202TS_00 Datasheet PDF : 24 Pages
1
2
3
4
5
6
7
8
9
10
Next
Last
Philips Semiconductors
Battery power unit
Objective specification
TEA1202TS
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
DC/DC converter
U
PCONVERSION
V
I(up)
V
O(up)
input voltage
output voltage
V
I(start)
start-up input voltage
D
OWNCONVERSION
I
L
< 10 mA
V
I(dwn)
input voltage
V
O(dwn)
output voltage
C
URRENT LEVELS
I
q
I
shdwn
I
LX(max)
∆
I
lim
quiescent current
current in shut-down mode
maximum continuous current at
pins LX1 and LX2
current limit deviation
T
amb
= 80
°
C
I
lim
set to 1.0 A
upconversion
downconversion
P
OWER
MOSFET
S
R
DSon(N)
R
DSon(P)
drain-to-source on-state
resistance NFET
drain-to-source on-state
resistance PFET
T
j
= 27
°
C
T
j
= 27
°
C
E
FFICIENCY
η
efficiency upconversion
T
IMING
V
I
= 1.2 V; V
O
up to 3.3 V
I
L
= 1 mA
I
L
= 10 mA
I
L
= 100 mA
f
sw
f
i(sync)
switching frequency
synchronization clock input
frequency
PWM mode
t
start
start-up time
Low dropout voltage regulators
V
LDO
V
dropout
I
LDO(max)
R
DSon
output voltage range
dropout voltage
maximum output current
drain-to-source on-state
resistance
V
LDO
< V
4
+ 0.4 V
I
LDO
= 50 mA
in regulation
V
FB1,2
> 2 V; T
j
= 27
°
C
General characteristics
V
ref
reference voltage
2000 Jun 08
3
MIN. TYP. MAX. UNIT
V
I(start)
−
5.50 V
V
O(uvlo)
−
5.50 V
0.93 0.96 1.00 V
V
O(uvlo)
−
1.30
−
5.50 V
5.50 V
−
110
−
µ
A
0
2
10
µ
A
−
−
1.0
A
−
12
−
−
12
−
+12
%
+12
%
−
110
−
m
Ω
−
125
−
m
Ω
−
66
−
%
−
81
−
%
−
85
−
%
480
600
720
kHz
6
13
20
MHz
−
10
−
ms
1.30
−
−
−
−
50
−
200
5.50 V
75
mV
−
mA
−
m
Ω
1.165 1.190 1.215 V
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]