BSP250 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
| BSP250 Datasheet PDF : 0 Pages | |||
Philips Semiconductors
P-channel enhancement mode
vertical D-MOS transistor
Product specification
BSP250
600
handbook, halfpage
C
(pF)
400
200
0
0
−10
MBE144
Ciss
Coss
Crss
−20 VDS (V) −30
VGS = 0.
Tj = 25 °C.
Fig.4 Capacitance as a function of drain source
voltage; typical values.
handbook−ID,1h2alfpage VGS =
(A)
−10 V
−10
−7.5 V
−8
−6
−4
−2
0
0
−2
−4
−6
MBE149
−6 V
−5 V
−4.5 V
−4 V
−3.5 V
−3 V
−2.5 V
−8 −10 −12
VDS (V)
Tj = 25 °C.
Fig.5 Output characteristics; typical values.
handbook−,1h6alfpage
ID
(A)
−12
MBE150
−8
−4
0
0
−2
−4
−6
−8
VGS (V)
handbook−,1h0alfpage
VGS
(V)
−8
MBE145
−6
−4
−2
0
0
−2
−4
−6
−8
−10
Qg (nC)
VDS = −10 V.
Tj = 25 °C.
Fig.6 Transfer characteristic, typical values.
1997 Jun 20
VDD = −15 V.
ID = −3 A.
Fig.7 Gate-source voltage as a function of total
gate charge.
5
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