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BUZ71 View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
BUZ71 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 71
Not for new design
Avalanche energy EAS = Æ’(Tj)
parameter: ID = 14 A, VDD = 25 V
RGS = 25 Ω, L = 30.6 µH
6.5
mJ
5.5
EAS 5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = Æ’(Tj)
Typ. gate charge
VGS = Æ’(QGate)
parameter: ID puls = 22 A
16
V
VGS
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
0
0 4 8 12 16 20 24 nC 30
QGate
60
V
V(BR)DSS 57
56
55
54
53
52
51
50
49
48
47
46
45
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
 

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