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D1047 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de piezacomponentes DescripciónFabricante
D1047 Silicon NPN Power Transistors Iscsemi
Inchange Semiconductor Iscsemi
D1047 Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=5mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=5mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A
VBE
Base-emitter on voltage
IC=1A;VCE=5V
ICBO
Collector cut-off current
VCB=80V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
COB
Collector output capacitance
f=1MHz;VCB=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1.0A; IB1=-IB2=0.1A
VCC=20V ,RL=20Ω
‹ hFE-1 Classifications
D
E
60-120
100-200
Product Specification
2SD1047
MIN TYP. MAX UNIT
140
V
160
V
6
V
2.5
V
1.5
V
0.1
mA
0.1
mA
60
200
20
15
MHz
210
pF
0.26
μs
6.88
μs
0.68
μs
2
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