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D1047E Ver la hoja de datos (PDF) - Inchange Semiconductor

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D1047E Silicon NPN Power Transistor Iscsemi
Inchange Semiconductor Iscsemi
D1047E Datasheet PDF : 2 Pages
1 2
isc Silicon NPN Power Transistor
isc Product Specification
2SD1047E
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
·Good Linearity of hFE
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SB817E
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for audio frequency amplifier output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Collector Power Dissipation
@ TC=25
Junction Temperature
160
V
140
V
6
V
12
A
15
A
100
W
150
Tstg
Storage Temperature Range
-40~150
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