STD4NK60Z-1_11 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD4NK60Z-1_11

N-channel 600 V, 1.76 Ω, 4 A SuperMESH™ Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

STMicroelectronics 

Electrical characteristics

STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

ISDM(1) Source-drain current (pulsed)

VSD(2) Forward on voltage

ISD = 4 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4 A, di/dt = 100 A/µs

VDD = 24 V, Tj = 150 °C

(see Figure 19)

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2. Pulse width limited by safe operating area

4

A

16 A

1.6 V

400

ns

1700

nC

8.5

A

Table 8.

Symbol

Gate-source Zener diode

Parameter

Test conditions

Min. Typ. Max. Unit

BVGSO Gate-source breakdown voltage Igs=± 1 mA (open drain) 30

V

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

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Doc ID 8882 Rev 7

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