IRL3303S/L
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
โV(BR)DSS/โTJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
30 โโโ โโโ V VGS = 0V, ID = 250ยตA
โโโ 0.035 โโโ V/ยฐC Reference to 25ยฐC, ID = 1mAย
โโโ โโโ 0.026
VGS = 10V, ID = 20A ย
โโโ โโโ 0.040 โฆ VGS = 4.5V, ID = 17A ย TJ = 150ยฐC
1.0 โโโ
V VDS = VGS, ID = 250ยตA
12 โโโ โโโ S VDS = 25V, ID = 20Aย
โโโ โโโ 25 ยตA VDS = 30V, VGS = 0V
โโโ โโโ 250
VDS = 24V, VGS = 0V, TJ = 150ยฐC
โโโ โโโ 100 nA VGS = 16V
โโโ โโโ -100
VGS = -16V
โโโ โโโ 26
ID = 20A
โโโ โโโ 8.8
โโโ โโโ 15
nC VDS = 24V
VGS = 4.5V, See Fig. 6 and 13 ยย
โโโ 7.4 โโโ
VDD = 15V
โโโ 200 โโโ
ID = 20A
โโโ 14 โโโ
RG = 6.5โฆ
โโโ 36 โโโ
โโโ 7.5 โโโ
RD = 0.7โฆ, See Fig. 10 ยย
Between lead,
nH
and center of die contact
โโโ 870 โโโ
โโโ 340 โโโ
VGS = 0V
pF VDS = 25V
โโโ 170 โโโ
ฦ = 1.0MHz, See Fig. 5ย
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 38
A showing the
integral reverse
G
โโโ โโโ 140
p-n junction diode.
S
โโโ โโโ 1.3
โโโ 72 110
โโโ 180 280
V TJ = 25ยฐC, IS = 20A, VGS = 0V ย
ns TJ = 25ยฐC, IF = 20A
ยตC di/dt = 100A/ยตs ยย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ย ISD โค 20A, di/dt โค 140A/ยตs, VDD โค V(BR)DSS,
TJ โค 175ยฐC
ย VDD = 15V, starting TJ = 25ยฐC, L = 470ยตH
RG = 25โฆ, IAS = 20A. (See Figure 12)
ย Pulse width โค 300ยตs; duty cycle โค 2%.
ย
Uses IRL3303 data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.