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IRL3303S View Datasheet(PDF) - International Rectifier

Part Name
Description
Manufacturer
IRL3303S
IR
International Rectifier IR
IRL3303S Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
IRL3303S/L
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
โˆ†V(BR)DSS/โˆ†TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
30 โ€“โ€“โ€“ โ€“โ€“โ€“ V VGS = 0V, ID = 250ยตA
โ€“โ€“โ€“ 0.035 โ€“โ€“โ€“ V/ยฐC Reference to 25ยฐC, ID = 1mAย…
โ€“โ€“โ€“ โ€“โ€“โ€“ 0.026
VGS = 10V, ID = 20A ย„
โ€“โ€“โ€“ โ€“โ€“โ€“ 0.040 โ„ฆ VGS = 4.5V, ID = 17A ย„ TJ = 150ยฐC
1.0 โ€“โ€“โ€“
V VDS = VGS, ID = 250ยตA
12 โ€“โ€“โ€“ โ€“โ€“โ€“ S VDS = 25V, ID = 20Aย…
โ€“โ€“โ€“ โ€“โ€“โ€“ 25 ยตA VDS = 30V, VGS = 0V
โ€“โ€“โ€“ โ€“โ€“โ€“ 250
VDS = 24V, VGS = 0V, TJ = 150ยฐC
โ€“โ€“โ€“ โ€“โ€“โ€“ 100 nA VGS = 16V
โ€“โ€“โ€“ โ€“โ€“โ€“ -100
VGS = -16V
โ€“โ€“โ€“ โ€“โ€“โ€“ 26
ID = 20A
โ€“โ€“โ€“ โ€“โ€“โ€“ 8.8
โ€“โ€“โ€“ โ€“โ€“โ€“ 15
nC VDS = 24V
VGS = 4.5V, See Fig. 6 and 13 ย„ย…
โ€“โ€“โ€“ 7.4 โ€“โ€“โ€“
VDD = 15V
โ€“โ€“โ€“ 200 โ€“โ€“โ€“
ID = 20A
โ€“โ€“โ€“ 14 โ€“โ€“โ€“
RG = 6.5โ„ฆ
โ€“โ€“โ€“ 36 โ€“โ€“โ€“
โ€“โ€“โ€“ 7.5 โ€“โ€“โ€“
RD = 0.7โ„ฆ, See Fig. 10 ย„ย…
Between lead,
nH
and center of die contact
โ€“โ€“โ€“ 870 โ€“โ€“โ€“
โ€“โ€“โ€“ 340 โ€“โ€“โ€“
VGS = 0V
pF VDS = 25V
โ€“โ€“โ€“ 170 โ€“โ€“โ€“
ฦ’ = 1.0MHz, See Fig. 5ย…
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โ€“โ€“โ€“ โ€“โ€“โ€“ 38
A showing the
integral reverse
G
โ€“โ€“โ€“ โ€“โ€“โ€“ 140
p-n junction diode.
S
โ€“โ€“โ€“ โ€“โ€“โ€“ 1.3
โ€“โ€“โ€“ 72 110
โ€“โ€“โ€“ 180 280
V TJ = 25ยฐC, IS = 20A, VGS = 0V ย„
ns TJ = 25ยฐC, IF = 20A
ยตC di/dt = 100A/ยตs ย„ย…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ยƒ ISD โ‰ค 20A, di/dt โ‰ค 140A/ยตs, VDD โ‰ค V(BR)DSS,
TJ โ‰ค 175ยฐC
ย‚ VDD = 15V, starting TJ = 25ยฐC, L = 470ยตH
RG = 25โ„ฆ, IAS = 20A. (See Figure 12)
ย„ Pulse width โ‰ค 300ยตs; duty cycle โ‰ค 2%.
ย… Uses IRL3303 data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
 

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