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BUZ271 View Datasheet(PDF) - Infineon Technologies

Part Name
Description
Manufacturer
BUZ271
Infineon
Infineon Technologies Infineon
BUZ271 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
BUZ 271
Typ. output characteristics
ID = Æ’(VDS)
parameter: tp = 80 µs
-50
Ptot = 125W
l
A
ID
-40
-35
-30
-25
-20
-15
-10
-5
0
0
-2
-4
-6
VGS [V]
a -4.0
b -4.5
c -5.0
d -5.5
e -6.0
f -6.5
g -7.0
h -7.5
k
i -8.0
j j -9.0
k -10.0
i l -20.0
h
g
f
e
d
c
ab
-8
V
-12
VDS
Typ. drain-source on-resistance
RDS (on) = Æ’(ID)
parameter: VGS
0.45
abc d e f g
h
i
Ω
RDS (on)0.35
0.30
0.25
0.20
0.15
0.10
j
0.05
0.00
VGS [V] =
abcdef
-45.05 -5.5 -6.0 -6.5 -7.0 -7.5
ghi j
-8.0 -9.0 -10.0 -20.0
0
-4
-8
-12 -16
A
-24
ID
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
-24
A
-20
ID
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
6.0
S
5.0
gfs
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
-4
-8
-12
-16 A -22
ID
Semiconductor Group
6
07/96
 

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