2SB1216 View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

2SB1216

NPN PLANAR TRANSISTOR

Unisonic Technologies 

2SB1216

NPN PLANAR TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

VCBO

-120

V

VCEO

-100

V

Emitter-Base Voltage

VEBO

-6

V

Collector Current

DC

PULSE(Note 1)

IC

-4

A

-8

A

Collector Power Dissipation

PD

2

W

Junction Temperature

Storage Temperature

TJ

+150

C

TSTG

-40 ~ +150

C

Note: 1.Duty=1/2, Pw=20ms

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter Base Breakdown Voltage

Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Transfer Ratio

Transition Frequency

Output Capacitance

Turn-on Time

Storage Time

Fall Time

SYMBOL

BVCBO

BVCEO

BVEBO

VBE(SAT)

VCE(SAT)

ICBO

IEBO

hFE1

hFE2

fT

Cob

tON

tSTG

tF

 CLASSIFICATION of hFE1

TEST CONDITIONS

IC =10μA, IE =0

IC =1mA, RB=∞

IE =10μA, IC=0

IC = 2A, IB =0.2A

IC = 2A, IB=0.2A

VCB = 100 V, IE =0

VEB = 4V, IC=0

VCE = 5V, IC = 0.5A

VCE =5V, IC = 3A

VCE =10V, IC =0.5A

VCB =10V, IE =0A, f =1MHz

See test circuit

See test circuit

See test circuit

MIN

-120

-100

-6

70

40

TYP

-0.9

-200

130

65

100

800

50

MAX UNIT

V

V

V

-1.2 V

-500 mV

-1 μA

-1 μA

400

MHz

pF

ns

ns

ns

RANK

RANGE

Q

70 -140

R

100 - 200

S

140 - 280

T

200 - 400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R225-006.a

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