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2SD1119 View Datasheet(PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

Part Name
Description
Manufacturer
2SD1119
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
2SD1119 Datasheet PDF : 2 Pages
1 2
2SD1119
TRANSISTOR (NPN)
FEATURES
z Low collector-emitter saturation voltage VCE(sat)
z Satisfactory operation performances at high efficiency with the low
voltage power supply.
MAXIMUM RATINGS (TA=25unless otherwise noted)
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
40
25
7
3
500
150
-55-150
Units
V
V
V
A
mW
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC =100μA, IE=0
V(BR)CEO IC =1mA, IB=0
V(BR)EBO IE=10μA, IC=0
ICBO
VCB=10V, IE=0
IEBO
VEB=6V, IC=0
hFE(1) VCE=2V, IC=500mA
hFE(2) VCE=2V, IC=2A
VCE(sat) IC=3A, IB=0.1A
fT
VCE=6V, IC=50mA, f=200MHz
Cob
VCB=20V, f=1MHz
MIN TYP MAX UNIT
40
V
25
V
7
V
0.1
μA
0.1
μA
230
600
150
1
V
150
MHz
50
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Q
230-380
TQ
R
340-600
TR
1 
JinYu
semiconductor
www.htsemi.com
 

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