Production specification
Silicon NPN epitaxial planar type
2SD1119
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-emitter breakdown voltage V(BR)CEO IC=1mA ,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO IE=10μA, IC=0
7
V
Collector cut-off current
ICBO
VCB=10V, IE=0
0.1 uA
Collector-emitter saturation voltage VCE(sat) IC/IB=3A/0.1A
1V
DC current gain(note)
hFE
Current gain bandwidth product
fT
Output Capacitance
Cob
CLASSIFICATION OF hFE2
RANK
RANGE
MARKING
VCE=2V, IC=0.5A
230
600
VCE=2V, IC=2A
VCE=6V,IC=50mA,
f=200MHz
150
150
MHz
VCB=20V, f=1MHz ,IE=0A
50 pF
Q
230-380
TQ
R
340-600
TR
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
E057
Rev.A
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