BUZ215 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

BUZ215

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel Mosfet Transistor

isc Product Specification

BUZ215

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA

VGS(TH) Gate Threshold Voltage

VDS= VGS; ID= 1mA

RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 3.2A

IGSS

Gate Source Leakage Current

VGS=20V;VDS= 0

IDSS

Zero Gate Voltage Drain Current

VDS= 500V; VGS= 0

VSD

Diode Forward Voltage

IF= 10A; VGS= 0

MIN MAX UNIT

500

V

2.1

4

V

1.5

Ω

100

nA

250

uA

1.6

V

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