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BUZ216 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
BUZ216
Iscsemi
Inchange Semiconductor Iscsemi
BUZ216 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
BUZ216
DESCRIPTION
·High speed switching
·Low RDS(ON)
·Easy driver for cost effective application
APPLICATIONS
·Automotive power actuator drivers
·Motor controls
·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
500
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=37
4.4
A
Total Dissipation@TC=25
75
W
Max. Operating Junction Temperature -55~150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.67 /W
Rth j-a Thermal Resistance,Junction to Ambient
75 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
 

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