BUZ21 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ21 Datasheet PDF : 8 Pages
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BUZ 21
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 21
VDS
100 V
ID
21 A
RDS(on)
0.085 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 21 A, VDD = 25 V, RGS = 25 Ω
L = 340 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1308-A2
Values
Unit
A
21
84
21
11
mJ
100
± 20
V
W
75
-55 ... + 150 °C
-55 ... + 150
≤ 1.67
K/W
75
E
55 / 150 / 56
Semiconductor Group
1
01/97
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