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IRF1407S/LPBF View Datasheet(PDF) - Infineon Technologies

Part NameIRF1407S/LPBF Infineon
Infineon Technologies Infineon
DescriptionHEXFET® Power MOSFET
IRF1407S/LPBF Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
1000
Duty Cycle = Single Pulse
100
0.01
0.05
10
0.10
IRF1407S/LPbF
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
1
1.0E-07
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 15. Typical Avalanche Current vs. Pulse width
1.0E-02
1.0E-01
400
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 78A
300
200
100
0
25
50
75
100 125
150
175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7
2016-5-26
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