IRF1407S/LPBF View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

IRF1407S/LPBF

HEXFET® Power MOSFET

Infineon Technologies 

15V

VDS

L

DRIVER

RG

20V

tp

D.U.T

IAS

0.01

+

-

VDD

A

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS

tp

I AS

Fig 12b. Unclamped Inductive Waveforms

Fig 13a. Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

6

IRF1407S/LPbF

650

ID

TOP

32A

55A

520

BOTTOM

78A

390

260

130

0

25

50

75

100

125

Starting T , JunJction Temperature

150

175

( °C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

3.5

3.0

ID = 250µA

2.5

2.0

1.5

-75 -50 -25 0 25 50 75 100 125 150 175 200

TJ , Temperature ( °C )

Fig 14. Threshold Voltage vs. Temperature

2016-5-26

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