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IRF1407S/LPBF View Datasheet(PDF) - Infineon Technologies

Part NameIRF1407S/LPBF Infineon
Infineon Technologies Infineon
DescriptionHEXFET® Power MOSFET
IRF1407S/LPBF Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
100000
10000
VGS = 0V, f = 1 kHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
100
1
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
IRF1407S/LPbF
15
ID = 78A
12
VDS = 60V
VDS = 37V
VDS = 15V
9
6
3
0
0
40
80
120
160
200
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
100.00 TJ = 175°C
10.00
1.00
TJ = 25°C
0.10
0.0
VGS = 0V
1.0
2.0
3.0
VSD, Source-toDrain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
2016-5-26
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