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IRF1407S/LPBF View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
IRF1407S/LPBF HEXFETยฎ Power MOSFET Infineon
Infineon Technologies Infineon
IRF1407S/LPBF Datasheet PDF : 12 Pages
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IRF1407S/LPbF
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
๏„V(BR)DSS/๏„TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
Source-Drain Ratings and Characteristics
75 โ€“โ€“โ€“ โ€“โ€“โ€“ V VGS = 0V, ID = 250ยตA
โ€“โ€“โ€“ 0.09 โ€“โ€“โ€“ V/ยฐC Reference to 25ยฐC, ID = 1mA ๏‚ˆ
โ€“โ€“โ€“ โ€“โ€“โ€“ 0.0078 ๏—๏€ ๏€  VGS = 10V, ID = 78A ๏‚„
2.0 โ€“โ€“โ€“ 4.0 V VDS = VGS, ID = 250ยตA
74 โ€“โ€“โ€“ โ€“โ€“โ€“ S VDS = 25V, ID = 78A๏‚ˆ
โ€“โ€“โ€“ โ€“โ€“โ€“
โ€“โ€“โ€“ โ€“โ€“โ€“
20
250
ยตA
VDS =75 V, VGS = 0V
VDS = 60V,VGS = 0V,TJ =150ยฐC
โ€“โ€“โ€“
โ€“โ€“โ€“
โ€“โ€“โ€“
200
-200
nA
VGS = 20V
VGS = -20V
โ€“โ€“โ€“ 160 250
ID = 78A
โ€“โ€“โ€“ 35 52 nC VDS = 60V
โ€“โ€“โ€“ 54 81
โ€“โ€“โ€“ 11 โ€“โ€“โ€“
โ€“โ€“โ€“ 150 โ€“โ€“โ€“
โ€“โ€“โ€“ 150 โ€“โ€“โ€“
โ€“โ€“โ€“ 140 โ€“โ€“โ€“
โ€“โ€“โ€“ 4.5 โ€“โ€“โ€“
โ€“โ€“โ€“ 7.5 โ€“โ€“โ€“
VGS = 10V ๏‚„๏‚ˆ
VDD = 38V
ns
ID =78A
RG= 2.5๏—๏€ 
VGS = 10V ๏‚„๏‚ˆ
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
โ€“โ€“โ€“ 5600 โ€“โ€“โ€“
VGS = 0V
โ€“โ€“โ€“ 890 โ€“โ€“โ€“
โ€“โ€“โ€“ 190 โ€“โ€“โ€“
โ€“โ€“โ€“ 5800 โ€“โ€“โ€“
โ€“โ€“โ€“ 560 โ€“โ€“โ€“
VDS = 25V
pF
ฦ’ = 1.0kHz, See Fig. 5๏‚ˆ
VGS = 0V, VDS = 1.0V ฦ’ = 1.0kHz
VGS = 0V, VDS = 60V ฦ’ = 1.0kHz
โ€“โ€“โ€“ 1100 โ€“โ€“โ€“
VGS = 0V, VDS = 0V to 60V
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)๏€ ๏‚๏€ 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
โ€“โ€“โ€“
โ€“โ€“โ€“
โ€“โ€“โ€“ 100๏‚†
โ€“โ€“โ€“ 520
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
โ€“โ€“โ€“ โ€“โ€“โ€“ 1.3 V TJ = 25ยฐC,IS = 78A,VGS = 0V ๏‚„๏‚ˆ๏€ 
โ€“โ€“โ€“ 110 170 ns TJ = 25ยฐC ,IF = 78A
โ€“โ€“โ€“ 390 590 nC di/dt = 100A/ยตs ๏‚„๏‚ˆ๏€ 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:๏€ 
๏‚ Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
๏‚‚ starting TJ = 25ยฐC, L = 0.13mH, RG = 25๏—, IAS = 78A, VGS =10V. (See fig. 12)
๏‚ƒ ISD ๏‚ฃ๏€ 78A, di/dt ๏‚ฃ๏€ 320A/ยตs, VDD ๏‚ฃ๏€ V(BR)DSS, TJ ๏‚ฃ 175ยฐC.
๏‚„ Pulse width ๏‚ฃ๏€ 400ยตs; duty cycle ๏‚ฃ 2%.
๏‚… Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
๏‚† Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
๏‚‡ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
๏‚ˆ Uses IRF1407 data and test conditions.
๏‚‰๏€ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
2
2016-5-26
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