IRF1407S/LPBF View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

IRF1407S/LPBF

HEXFET® Power MOSFET

Infineon Technologies 

IRF1407SPbF

IRF1407LPbF

Benefits

 Advanced Process Technology

 Ultra Low On-Resistance

 Dynamic dv/dt Rating

 175°C Operating Temperature

 Fast Switching

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free

Description

Advanced HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device

design that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in any

existing surface mount package. The D2Pak is suitable for high

current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRF1407L) is available for low-profile

applications.

HEXFET® Power MOSFET

VDSS

RDS(on)

ID

75V

0.0078

100A

D

D

S

G

D2 Pak

IRF1407SPbF

S

GD

TO-262 Pak

IRF1407LPbF

G

Gate

D

Drain

S

Source

Base part number

IRF1407LPbF

IRF1407SPbF

Package Type

TO-262

D2-Pak

Standard Pack

Form

Quantity

Tube

50

Tape and Reel Left

800

Orderable Part Number

IRF1407LPbF (Obsolete)

IRF1407STRLPbF

Absolute Maximum Ratings

Symbol

Parameter

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V 

ID @ TC = 100°C

IDM

PD @TA = 25°C

Continuous Drain Current, VGS @ 10V 

Pulsed Drain Current 

Maximum Power Dissipation

PD @TC = 25°C

Maximum Power Dissipation

Linear Derating Factor

VGS

EAS

IAR

EAR

dv/dt

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited) 

Avalanche Current 

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt

TJ

Operating Junction and

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

Max.

100

70

520

3.8

200

1.3

± 20

390

See Fig.15,16, 12a, 12b

4.6

-55 to + 175

300

10 lbf•in (1.1N•m)

Units

A

W

W

W/°C

V

mJ

A

mJ

V/ns

°C

Thermal Resistance

Symbol

Parameter

RJC

Junction-to-Case

RJA

Junction-to-Ambient ( PCB Mount, steady state) 

Typ.

–––

–––

Max.

0.75

40

Units

°C/W

1

2016-5-26

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