IRF1407SPBF View Datasheet(PDF) - International Rectifier
Part Name
Description
Manufacturer
IRF1407SPBF Datasheet PDF : 12 Pages
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IRF1407S/LPbF
Electrical Characteristics @ TJ = 25ยฐC (unless otherwise specified)
V(BR)DSS
โV(BR)DSS/โTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min. Typ. Max. Units
75 โโโ โโโ V
โโโ 0.09 โโโ V/ยฐC
โโโ โโโ 0.0078 โฆ
2.0 โโโ 4.0 V
74 โโโ โโโ S
โโโ โโโ 20 ยตA
โโโ โโโ 250
โโโ โโโ 200
nA
โโโ โโโ -200
โโโ 160 250
โโโ 35 52 nC
โโโ 54 81
โโโ 11 โโโ
โโโ 150 โโโ
ns
โโโ 150 โโโ
โโโ 140 โโโ
LD
Internal Drain Inductance
LS
Internal Source Inductance
โโโ 4.5 โโโ
nH
โโโ 7.5 โโโ
Ciss
Input Capacitance
โโโ 5600 โโโ
Coss
Output Capacitance
โโโ 890 โโโ pF
Crss
Reverse Transfer Capacitance
โโโ 190 โโโ
Coss
Output Capacitance
โโโ 5800 โโโ
Coss
Output Capacitance
โโโ 560 โโโ
Coss eff. Effective Output Capacitance ย
โโโ 1100 โโโ
Source-Drain Ratings and Characteristics
Conditions
VGS = 0V, ID = 250ยตA
Reference to 25ยฐC, ID = 1mA ย
VGS = 10V, ID = 78A ย
VDS = 10V, ID = 250ยตA
VDS = 25V, ID = 78A ย
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150ยฐC
VGS = 20V
VGS = -20V
ID = 78A
VDS = 60V
VGS = 10Vยย
VDD = 38V
ID = 78A
RG = 2.5โฆ
VGS = 10V ยย
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ฦ = 1.0KHz, See Fig. 5 ย
VGS = 0V, VDS = 1.0V, ฦ = 1.0KHz
VGS = 0V, VDS = 60V, ฦ = 1.0KHz
VGS = 0V, VDS = 0V to 60V
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 100ย
A
showing the
integral reverse
G
โโโ โโโ 520
p-n junction diode.
S
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 78A, VGS = 0V ย
โโโ 110 170 ns TJ = 25ยฐC, IF = 78A
โโโ 390 590 nC di/dt = 100A/ยตs ยย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ย Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
ย Starting TJ = 25ยฐC, L = 0.13mH
RG = 25โฆ, IAS = 78A. (See Figure 12).
ย ISD โค 78A, di/dt โค 320A/ยตs, VDD โค V(BR)DSS,
TJ โค 175ยฐC
ย Pulse width โค 400ยตs; duty cycle โค 2%.
ย
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
ย Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
ย Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
ย Uses IRF1407 data and test conditions.
2
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