DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

FQPF13N50_02 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQPF13N50_02
Fairchild
Fairchild Semiconductor Fairchild
FQPF13N50_02 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
Notes :
1. V =0V
2.
I
GS
=
250
μ
A
D
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
102
is Limited by R DS(on)
100 µs 10 µs
1 ms
101
10 ms
DC
100
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-1
100
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 9-1. Maximum Safe Operating Area
for FQP13N50
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. V = 10 V
GS
2. ID = 6.7 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
Operation in This Area
102
is Limited by R DS(on)
10 µs
100 µs
101
1 ms
10 ms
100 ms
DC
100
10-1
Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
102
103
V , Drain-Source Voltage [V]
DS
Figure 9-2. Maximum Safe Operating Area
for FQPF13N50
15
12
9
6
3
0
25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current
vs. Case Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]