MUN5311DW1T1 View Datasheet(PDF) - ON Semiconductor
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Description
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| MUN5311DW1T1 Datasheet PDF : 0 Pages | |||
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1 PNP TRANSISTOR
1
IC/IB = 10
1000
VCE = 10 V
TA = −25°C
0.1
100
25°C
75°C
TA = 75°C
25°C
−25°C
0.01
0
20
40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
10
50
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
4
100
75°C
25°C
f = 1 MHz
3
lE = 0 V
TA = 25°C
10
TA = −25°C
1
2
0.1
1
0.01
VO = 5 V
0
0
10
20
30
40
50
0.001
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input
Voltage
100
VO = 0.2 V
10
1
TA = −25°C
25°C
75°C
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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