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MUN5311DW1T1 View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
MUN5311DW1T1 Dual Bias Resistor Transistors ON-Semiconductor
ON Semiconductor ON-Semiconductor
MUN5311DW1T1 Datasheet PDF : 35 Pages
First Prev 31 32 33 34 35
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1 NPN TRANSISTOR
1
1000
TA = 25°C
75°C
0.1
100
25°C
IC/IB = 10
0.01
10
0 5 10 15 20 25 30 35 40 45 50
1
IC, COLLECTOR CURRENT (mA)
Figure 128. VCE(sat) versus IC
75°C
TA = 25°C
25°C
VCE = 10 V
10
100
IC, COLLECTOR CURRENT (mA)
Figure 129. DC Current Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
100
f = 1 MHz
IE = 0 V
TA = 25°C
10
1
75°C
25°C
TA = 25°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 130. Output Capacitance
0.1
0.01
VO = 5 V
0.001
60
0 1 2 3 4 5 6 7 8 9 10 11
Vin, INPUT VOLTAGE (VOLTS)
Figure 131. Output Current versus Input
Voltage
100
VO = 0.2 V
10
TA = 25°C
75°C
25°C
1
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
Figure 132. Input Voltage versus Output
Current
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