MUN5311DW1T1 View Datasheet(PDF) - ON Semiconductor
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Description
Manufacturer
MUN5311DW1T1 Datasheet PDF : 0 Pages
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MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1 NPN TRANSISTOR
1
IC/IB = 10
1000
VCE = 10 V
75°C
0.1
100
−25°C
25°C
75°C
0.01
10
0.001
1
0
5
10
15
20
25
30
1
IC, COLLECTOR CURRENT (mA)
Figure 62. VCE(sat) versus IC
TA = −25°C
25°C
10
100
IC, COLLECTOR CURRENT (mA)
Figure 63. DC Current Gain
100
75°C
10
25°C
1
TA = −25°C
0.1
10
TA = −25°C
1 75°C
25°C
0.01
VO = 5 V
0.001
01
23 4567 8
Vin, INPUT VOLTAGE (VOLTS)
9 10
Figure 64. Output Current versus Input Voltage
VO = 0.2 V
0.1
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
Figure 65. Input Voltage versus Output Current
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