MUN5311DW1T1 View Datasheet(PDF) - ON Semiconductor
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MUN5311DW1T1 Datasheet PDF : 0 Pages
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MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1 NPN TRANSISTOR
1
IC/IB = 10
0.1
−25°C
25°C
0.01
1000
75°C
TA = −25°C
100
10
75°C
VCE = 10 V
25°C
0.001
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 42. VCE(sat) versus IC
1
50
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 43. DC Current Gain
12
f = 1 MHz
10
IE = 0 V
TA = 25°C
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 44. Output Capacitance
100
75°C
10
1
25°C
0.1
TA = −25°C
0.01
VO = 5 V
0.001
01
23 4567 8
Vin, INPUT VOLTAGE (VOLTS)
9 10
Figure 45. Output Current versus Input Voltage
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 46. Input Voltage versus Output Current
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