MUN5311DW1T1 View Datasheet(PDF) - ON Semiconductor
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MUN5311DW1T1 Datasheet PDF : 0 Pages
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MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1 PNP TRANSISTOR
1
IC/IB = 10
0.1
0.01
TA = −25°C
25°C
75°C
0.001 0
20
40
60
80
IC, COLLECTOR CURRENT (mA)
Figure 37. VCE(sat) versus IC
180
160 VCE = 10 V
140
120
TA = 75°C
25°C
−25°C
100
80
60
40
20
0
1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Figure 38. DC Current Gain
4.5
4
f = 1 MHz
lE = 0 V
3.5
TA = 25°C
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 39. Output Capacitance
100
TA = 75°C
25°C
−25°C
10
VO = 5 V
1
0
2
4
6
8
10
Vin, INPUT VOLTAGE (VOLTS)
Figure 40. Output Current versus Input Voltage
10
VO = 0.2 V
75°C
1
25°C
TA = −25°C
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 41. Input Voltage versus Output Current
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