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SFR/U9210 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
SFR/U9210
Fairchild
Fairchild Semiconductor Fairchild
SFR/U9210 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
SFR/U9210
P-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
-200 --
-- -0.2
-2.0 --
-- --
-- --
-- --
-- --
-- --
-- V
-- V/oC
-4.0 V
-100 nA
100
-10
-100 µA
3.0
VGS=0V,ID=-250µA
ID=-250µA See Fig 7
VDS=-5V,ID=-250µA
VGS=-30V
VGS=30V
VDS=-200V
VDS=-160V,TC=125oC
VGS=-10V,ID=-0.8A
O4
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 1.0 --
VDS=-40V,ID=-0.8A
O4
-- 220 285
--
45
65
VGS=0V,VDS=-25V,f =1MHz
pF
See Fig 5
-- 16 25
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 10 30
-- 20 50
VDD=-100V,ID=-1.75A,
-- 27 65 ns RG=18
-- 12 35
See Fig 13 O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(£¢Miller£¢) Charge
-- 9 11
VDS=-160V,VGS=-10V,
-- 1.8 -- nC ID=-1.75A
-- 4.8 --
See Fig 6 & Fig 12 O4 O5
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- -1.6
Integral reverse pn-diode
A
-- -6.4
in the MOSFET
O4 -- -- -4.0 V TJ=25oC,IS=-1.6A,VGS=0V
-- 110 -- ns TJ=25oC,IF=-1.75A
-- 0.42 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=70mH, IAS=-1.6A, VDD=-50V, RG=27*, Starting TJ =25oC
O3 ISD <_-1.75A, di/dt <_ 250A/µs, VDD <_BVDSS , Starting TJ =25oC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_ 2%
O5 Essentially Independent of Operating Temperature
©1999 Fairchild Semiconductor Corporation
 

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