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FQPF5P10 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQPF5P10
Fairchild
Fairchild Semiconductor Fairchild
FQPF5P10 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Characteristics
101
Top :
V
GS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-5.5 V
100
-5.0 V
Bottom : -4.5 V
10-1
10-2
10-1
Notes :
1. 250µs Pulse Test
2. T = 25
C
100
101
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.5
2.0
VGS = - 10V
1.5
VGS = - 20V
1.0
0.5
Note : TJ = 25
0.0
0
3
6
9
12
-I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
500
450
400
350
300
250
200
150
100
50
0
10-1
C
oss
C
iss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
101
100
10-1
2
175
25
-55
Notes :
1. VDS = -40V
2. 250μ s Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.0
17525
Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = -20V
VDS = -50V
V = -80V
8
DS
6
4
2
Note : ID = -4.5 A
0
0
1
2
3
4
5
6
7
8
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, August 2002
 

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