TIP140 View Datasheet(PDF) - Comset Semiconductors

Part Name

Description

Manufacturer

TIP140

NPN SILICON DARLINGTONS, SILICON POWER TRANSISTORS

Comset Semiconductors 

TIP140 – TIP141 – TIP142

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

ICEO

Collector Cutoff Current

IB= 0

IEBO

Emitter Cutoff Current

IC= 0

VCE= 30 V

VCE= 40 V

VCE= 50 V

VBE= 5 V

TIP140 -

-

TIP141 -

-

2 mA

TIP142 -

-

TIP140 -

-

TIP141 -

-

2 mA

TIP142 -

-

ICBO

Collector Cutoff Current

IE= 0

VCE0(SUS)

Collector-Emitter Sustaining

IB= 0

VCB= 60 V

VCB= 80 V

VCB= 100 V

IC= 30 mA

TIP140 -

-

TIP141 -

-

TIP142 -

-

TIP140 60 -

TIP141 80 -

TIP142 100 -

1 mA

-

-

V

-

hFE

DC Current Gain (*)

VCE(SAT)

Collector-Emitter saturation

Voltage (*)

VCE= 4 V

IC= 5 A

VCE= 4 V

IC= 10 A

IC= 5 A

IB= 10 mA

IC= 10 A

IB=40 mA

1000 -

500 -

TIP140

TIP141 -

-

TIP142

TIP140

TIP141 -

-

TIP142

-

-

-

2

V

3

VBE

Base-Emitter Voltage (*)

VCE= 4 V

IC= 10 A

TIP140

TIP141 -

-

3

V

TIP142

VF

Parallel Diode forward voltage IF=10 A

ton

Turn-on Time

VBE(off)= -4.2V

IC= 10 A, RL= 3 Ω

toff

Turn-on Time

IB(on)= 40mA

IB(off)= -40 mA

-

- 3.5 V

- 0.9 -

µs

- 11 -

(*) Pulse Width = 200 µs, Duty Cycle ∠ 1.5%

30/10/2012

COMSET SEMICONDUCTORS

2/3

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