FQD4P25 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQD4P25 Datasheet PDF : 9 Pages
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Typical Characteristics
101
Top :
V
GS
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
100
Bottom :
-6.0 V
-5.5 V
10-1
10-2
10-1
※ Notes :
1. 250μs Pulse Test
2. T = 25℃
C
100
101
-V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
8
6
V = - 10V
GS
V = - 20V
GS
4
2
※ Note : TJ = 25℃
0
0
3
6
9
12
-ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
700
600
500
400
300
200
100
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
C
oss
C
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
150℃
10-1
2
25℃
-55℃
※ Notes :
1. VDS = -50V
2. 250μs Pulse Test
4
6
8
10
-VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.0
150℃ 25℃
※ Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.5
1.0
1.5
2.0
2.5
3.0
-VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = -50V
DS
10
V = -125V
DS
VDS = -200V
8
6
4
2
※ Note : ID = -4.0 A
0
0
2
4
6
8
10
12
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A2, December 2000
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