FDS4070N7 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

FDS4070N7

40V N-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

VSD

Drain–Source Diode Forward

Voltage

VGS = 0 V, IS = 2.5 A (Note 2)

trr

Diode Reverse Recovery Time

IF = 15.3 A,

Qrr

Diode Reverse Recovery Charge

diF/dt = 100 A/µs

2.5

A

0.7 1.2

V

32

nS

39

nC

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 40°C/W when

mounted on a 1in2 pad

of 2 oz copper

b) 85°C/W when mounted on

a minimum pad of 2 oz

copper

Scale 1 : 1 on letter size pape

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0

FDS4070N7 Rev B2 (W)

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