FQP19N10 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQP19N10 Datasheet PDF : 8 Pages
| |||
Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
101
Bottom :
5.0 V
4.5 V
100
10-1
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
0.30
0.24
V = 10V
GS
0.18
VGS = 20V
0.12
0.06
0.00
0
※ Note : TJ = 25℃
20
40
60
80
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1500
1200
900
600
300
Ciss
Coss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
175℃
100
25℃
10-1
2
-55℃
※ Notes :
1. VDS = 40V
2. 250μs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
175℃ 25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 50V
DS
V = 80V
8
DS
6
4
2
※ Note : ID = 19A
0
0
4
8
12
16
20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, August 2000
|
|
Share Link: 