FQPF19N20C_13 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQPF19N20C_13 Datasheet PDF : 11 Pages
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Package Marking and Ordering Information
Device Marking
FQP19N20C
FQPF19N20C
Device
FQP19N20C
FQPF19N20C
Package
TO-220
TO-220F
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Reel Size
Tube
Tube
Tape Width
N/A
N/A
Quantity
50 units
50 units
Min
Typ
Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
200
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature Coeffi-
cient
ID = 250 μA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
VDS = 160 V, TC = 125°C
--
--
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 μA
2.0
VGS = 10 V, ID = 9.5 A
--
gFS
Forward Transconductance
VDS = 40 V, ID = 9.5 A
--
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
Crss
Reverse Transfer Capacitance
--
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 100 V, ID = 19.0 A,
RG = 25 Ω
--
--
--
(Note 4)
--
VDS = 160 V, ID = 19.0 A,
--
VGS = 10 V
--
(Note 4)
--
--
--
V
0.24
--
V/°C
--
10
μA
--
100
μA
--
100
nA
--
-100
nA
--
4.0
V
0.14 0.17
Ω
10.8
--
S
830 1080
pF
195
255
pF
85
110
pF
15
40
ns
150
310
ns
135
280
ns
115
240
ns
40.5 53.0
nC
6.0
--
nC
22.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 19.0 A
trr
Reverse Recovery Time
VGS = 0 V, IS = 19.0 A,
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 1.8 mH, IAS = 19.0 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 19.0 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
19.0
A
--
--
76.0
A
--
--
1.5
V
--
208
--
ns
--
1.63
--
μC
©2004 Fairchild Semiconductor Corporation
2
FQP19N20C / FQPF19N20C Rev. C1
www.fairchildsemi.com
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