KD1414 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
| KD1414 Datasheet PDF : 0 Pages | |||
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
KTD1414
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
80
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
1.5
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 3A; IB= 6mA
VCB= 100V; IE= 0
2.0
V
20
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2.5
mA
hFE -1
DC Current Gain
IC= 1A; VCE= 2V
2000
hFE -2
DC Current Gain
IC= 3A; VCE= 2V
1000
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IB1= -IB2= 6mA
RL= 10Ω; VCC= 30V
PW=20μs; Duty Cycle≤1%
0.2
μs
1.5
μs
0.6
μs
isc website：www.iscsemi.com
2 isc & iscsemi is registered trademark
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