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BCW33_03 View Datasheet(PDF) - Diotec Semiconductor Germany

Part Name
Description
Manufacturer
BCW33_03
Diotec
Diotec Semiconductor Germany  Diotec
BCW33_03 Datasheet PDF : 2 Pages
1 2
General Purpose Transistors
Characteristics (Tj = 25/C)
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA
VBEsat
IC = 50 mA, IB = 2.5 mA
VBEsat
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 5 V, IC = 10 :A
BCW 31 hFE
BCW 32 hFE
BCW 33 hFE
BCW 31 hFE
VCE = 5 V, IC = 2 mA
BCW 32 hFE
BCW 33 hFE
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 5 V, IC = 2 mA
Gain-Bandwidth Product – Transitfrequenz
VBEon
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 :A, RG = 2 kS,
f = 1 kHz, )f = 200 Hz
F
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BCW 31, BCW 32, BCW 33
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
750 mV
850 mV
190
330
600
110
220
200
450
420
800
550 mV
700 mV
100 MHz
2.5 pF
10 dB
RthA
420 K/W 2)
BCW 29, BCW 30
Marking – Stempelung
BCW 31 = D1 BCW 32 = D2 BCW 33 = D3
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
37
 

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