BCW31 ... BCW33
Characteristics (Tj = 25°C)
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
IC = 2 mA, VCE = 5 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 30 V, (E open)
VCE = 30 V, Tj = 100°C, (E open)
Emitter-Base cutoff current
VEB = 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking - Stempelung
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
VBEsat
–
750 mV
–
VBEsat
–
850 mV
–
VBE 550 mV
–
700 mV
ICB0
–
ICB0
–
–
100 nA
–
10 µA
IEB0
–
–
100 nA
fT 100 MHz
–
–
CCBO
–
2.5 pF
6 pF
F
–
–
10 dB
RthA
< 420 K/W 1)
BCW29, BCW30
BCW31 = D1
BCW32 = D2
BCW33 = D3
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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