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BCW31 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
Manufacturer
BCW31
NXP
NXP Semiconductors. NXP
BCW31 Datasheet PDF : 0 Pages
NXP Semiconductors
NPN general purpose transistors
Product data sheet
BCW31; BCW32; BCW33
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
emitter cut-off current
DC current gain
BCW31
BCW32
BCW33
DC current gain
BCW31
BCW32
BCW33
collector-emitter saturation
voltage
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
fT
transition frequency
F
noise figure
CONDITIONS
IE = 0; VCB = 32 V
IE = 0; VCB = 32 V; Tj = 100 °C
IC = 0; VEB = 5 V
IC = 10 μA; VCE = 5 V
IC = 2 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
IC = 50 mA; IB = 2.5 mA
IC = 10 mA; IB = 0.5 mA
IC = 50 mA; IB = 2.5 mA
IC = 2 mA; VCE = 5 V
IE = Ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 5 V;
f = 100 MHz
IC = 200 μA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
MIN.
110
200
420
550
100
TYP.
190
330
600
120
210
750
850
2.5
MAX.
100
10
100
220
450
800
250
700
10
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
pF
MHz
dB
2004 Feb 06
3
 

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