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BZX55F2V7_99 View Datasheet(PDF) - Vishay Semiconductors

Part NameDescriptionManufacturer
BZX55F2V7_99 Silicon Epitaxial Planar Z–Diodes Vishay
Vishay Semiconductors Vishay
BZX55F2V7_99 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Silicon Epitaxial Planar Z–Diodes
Features
D Very sharp reverse characteristic
D Low reverse current level
D Very high stability
D Low noise
D Available with tighter tolerances
BZX55C...
Vishay Telefunken
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Power dissipation
Z–current
l=4mm, TL=25°C
Junction temperature
Storage temperature range
Type
Symbol Value Unit
PV
500
mW
IZ
PV/VZ
mA
Tj
175
°C
Tstg –65...+175 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
l=4mm, TL=constant
Symbol
Value
Unit
RthJA
300
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=200mA
Type
Symbol Min Typ Max Unit
VF
1.5 V
Document Number 85605
Rev. 4, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600
1 (6)
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