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IRFP350A View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
IRFP350A
Iscsemi
Inchange Semiconductor Iscsemi
IRFP350A Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP350A
FEATURES
·Drain Current ID= 17A@ TC=25
·Drain Source Voltage-
: VDSS= 400V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
400
V
±30
V
ID
Drain Current-Continuous
17
A
IDM
Drain Current-Single Pluse
68
A
PD
Total Dissipation @TC=25
202
W
TJ
Max. Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.62 /W
Rth j-a Thermal Resistance, Junction to Ambient
40
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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