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FQD5N40 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQD5N40 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
FQD5N40 / FQU5N40
N-Channel QFET® MOSFET
400 V, 3.4 A, 1.6 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
March 2013
Features
• 3.4 A, 400 V, RDS(on)=1.6 Ω(Max.)@VGS=10 V, ID=1.7 A
• Low Gate Charge (Typ. 10 nC)
• Low Crss (Typ. 7 pF)
• 100% Avalanche Tested





         

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©2000 Fairchild Semiconductor Corporation
FQD5N40 / FQU5N40 Rev. C0




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www.fairchildsemi.com
 

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