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FDS6612A View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FDS6612A
Fairchild
Fairchild Semiconductor Fairchild
FDS6612A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
PSPICE Electrical Model N-Channel
.SUBCKT FDS6612A 2 1 3
*NOM TEMP=25 DEG C
*REV A - JULY 2003
CA 12 8 1E-9
CB 15 14 4.0E-10
CIN 6 8 5.1E-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 34.2
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LGATE 1 9 3.84E-9
LDRAIN 2 5 1.00E-9
LSOURCE 3 7 4E-9
GATE
1
RLGATE 1 9 38.4
RLDRAIN 2 5 10
RLSOURCE 3 7 40
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 8E-3
RGATE 9 20 4.2
RSLC1 5 51 RSLCMOD 1E-6
RSLC2 5 50 1E3
RSOURCE 8 7 RSOURCEMOD 7.5E-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
DPLC AP
10
RSLC2
5
RSLC1
51
5 ESLC
51
DBREA K
11
LDRA IN
RLDRAIN
DRA IN
2
LGATE
RLGA TE
-
ESG
6
8
+
EVTH RES
+ 19 -
EVTEMP
8
RGATE + 18 - 6
9
20 22
C IN
S1A
12 13
8
S2A
14
15
13
50
R DRA IN
16
21
+
17
EBREAK 18
-
MWEAK
D BODY
MMED
MSTRO
8
7
RSOUR CE
LSOURC E
SOURC E
3
RLSOU RCE
RBREAK
17
18
S1B
S2B
CA
13
CB
+
+ 14
EGS
6
8
EDS
5
8
-
-
RVTEMP
19
IT
-
VBA T
+
8
22
RVTHRES
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1E-6*105),3))}
.MODEL DBODYMOD D (IS=7E-15 RS=6.1E-3 N=0.84 TRS1=1.7E-3 TRS2=1.0E-6
+ CJO=3.2E-10 TT=10E-9 M=0.5 IKF=0.3 XTI=3.0)
.MODEL DBREAKMOD D (RS=1E-1 TRS1=1.12E-3 TRS2=1.25E-6)
.MODEL DPLCAPMOD D (CJO=14E-11 IS=1E-30 N=10 M=0.34)
.MODEL MWEAKMOD NMOS (VTO=1.82 KP=0.05 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=42 RS=.1)
.MODEL MMEDMOD NMOS (VTO=2.1 KP=6 IS=1E-30 N=10 TOX=1 L=1U W=1U RG=4.2)
.MODEL MSTROMOD NMOS (VTO=2.55 KP=50 IS=1E-30 N=10 TOX=1 L=1U W=1U)
.MODEL RBREAKMOD RES (TC1=0.83E-3 TC2=1E-7)
.MODEL RDRAINMOD RES (TC1=6E-3 TC2=5E-6)
.MODEL RSLCMOD RES (TC1=2.5E-3 TC2=4.5E-6)
.MODEL RSOURCEMOD RES (TC1=1.0E-3 TC2=1E-6)
.MODEL RVTHRESMOD RES (TC1=-2.013E-3 TC2=-7E-6)
.MODEL RVTEMPMOD RES (TC1=-1.5E-3 TC2=1E-6)
.MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-4 VOFF=-3)
.MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3 VOFF=-4)
.MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.3 VOFF=-0.5)
.MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-0.5 VOFF=-1.3)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
FDS6612A Rev D (W)
 

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